• ossila材料4CzPN-Ph

    CAS Number 1469707-47-8

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    产品详情

    3,4,5,6-tetrakis(3,6-diphenylcarbazol-9-yl)- 1,2-dicyanobenzene (4CzPN-Ph), an iso-structure to 4CzTPN-Ph, has a fully substituted benzene ring with four bulky 3,6-diphenyl-9H-carbazoles and two ortho cyano groups at 1,2-positions.

    Comparing with 4CzTPN-Ph, 4CzPN-Ph is structurally more hindered with all four diphenylcarbazolyl next to each other while four diphenylcarbazolyl are evenly separated in 4CzTPN-Ph. For this reason, 4CzTPN-Ph is relatively more conjugated is red-shifted in emission than 4CzPN-Ph.

    4CzPN-Ph is a yellow emitter commonly used as a TADF dopant for highly efficient TADF devices. All TADF-based white organic light emitting diodes (WOLEDs) device with 4′-diphenylphosphinoylspiro[fluorene-9,9′-xanthene] (SFXSPO) as host, blue TADF material DMAC-DPS and yellow TADF material 4CzPN-Ph as the dopants, showed high device performance efficiencies with PE max of 40.6 lm/W, EQE max of 19.1%, and CE max of 50.5 cd/A.

    General Information


    CAS Number 1469707-47-8
    Chemical Formula C104H64N6
    Molecular Weight 1397.66 g/mol
    Absorption λmax
    Fluorescence λem
    HOMO/LUMO HOMO = 5.5 eV, LUMO = 3.3 eV (ET = 2.81 eV) [1]
    Full name 3,4,5,6-tetrakis(3,6-diphenylcarbazol-9-yl)- 1,2-dicyanobenzene
    Synonyms 4CzPNPh, 3,4,5,6-tetrakis(3,6-diphenyl-9H-carbazol-9-yl)phthalonitrile
    Classification / Family Carbazole derivatives, TADF yellow emitter materials, Phosphorescent organic light-emitting devices (PHOLEDs), TADF-OLEDs, organic electronics

    Product Details


    Purity Unsublimed >98.0%
    Melting Point N/A
    Colour Orange powder

    Sublimation is a technique used to obtain ultra pure-grade chemicals. For more details about sublimation, please refer to the sublimed materials for OLED devices page.

    Chemical Structure


    4czpn-ph, 1469707-47-8Chemical structure of 3,4,5,6-tetrakis(3,6-diphenylcarbazol-9-yl)- 1,2-dicyanobenzene (4CzPN-Ph), CAS 1469707-47-8

    Device Structure(s)


    Device Structure ITO/MoO3 (6 nm)/NPB (70 nm)/mCP (5 nm)/SFXSPO:4CzPNPh (20 nm, 5%wt.)/SFXSPO (5 nm)/TPBi (30 nm)/LiF(1 nm)/Al [1]
    Colour Yellow yellow light emitting device
    Max. EQE 9.9%
    Max. Current Efficiency 27.9 cd/A
    Max. Power Efficiency 25.0 lm W−1

     

    Device Structure ITO/MoO3 (6 nm)/NPB (70 nm)/mCP (5 nm)/SFXSPO:4CzPNPh (20 nm, 5%wt.)/SFXSPO:DMAC-DPS (20 nm, 10%wt.)/SFXSPO (5 nm)/Bphen (30 nm)/LiF(1 nm)/Al [1]
    Colour White white light emitting device
    Max. EQE 19.1%
    Max. Current Efficiency 50.5 cd/A
    Max. Power Efficiency 40.6 lm W−1

     

    Device Structure ITO/MoO3 (8 nm)/TAPC (40 nm)/5CzOXD: 4CzPNPh (8 wt% 20 nm)/BmPyPB (40 nm)/LiF (1 nm)/Al [2]
    Colour Yellow yellow light emitting device
    Max. EQE 17.1%
    Max. Current Efficiency 50.6 cd/A
    Max. Power Efficiency 64.7 lm W−1

     

    Device Structure ITO/MoO3 (8 nm)/TAPC (40 nm)/mCP:5CzOXD:4CzPNPh (66 : 33 : 1 wt%, 10 nm)/BmPyPB (40 nm)/LiF (1 nm)/Al [2]
    Colour White white light emitting device
    Max. EQE 9.9%
    Max. Current Efficiency 20.7 cd/A
    Max. Power Efficiency 33.4 lm W−1
    Device Structure ITO/MoO3 (6 nm)/NPB (70 nm)/mCP (5 nm)/3-Sprio:4CzPNPh (5 wt%, 20 nm)/3-Sprio (5 nm)/TPBI (30 nm)/LiF (1 nm)/Al [3]
    Colour White white light emitting device
    Max. EQE 11.0%
    Max. Current Efficiency 32.5 cd/A
    Max. Power Efficiency 15.3 lm W−1

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